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| SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 OCTOBER 1995 FEATURES * 150 Volt VCEO * 1 Amp continuous current 7 FCX495 C PARTMARKING DETAIL - N95 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 170 150 5 1 2 200 1 -65 to +150 UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Emitter Saturation Voltages Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio ICBO, ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 100 100 50 10 100 10 MIN. 170 150 5 100 100 0.2 0.3 1.0 1.0 MAX. UNIT V V V nA nA V V V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=150V, VCE=150V VEB=4V IC=250mA, IB=25mA* IC=500mA, IB=50mA* IC=500mA, IB=50mA* IC=500mA, VCE=10V* IC=1mA, VCE=10V IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 300 Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT495 Datasheet 3 - 89 |
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